Communication Dans Un Congrès Année : 2012

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs

Résumé

Low-frequency (LF) noise has been studied on 28 nm FDSOI devices with ultra-thin silicon film (7 nm) and thin buried oxide (25 nm). A strong dependence of the noise level on the combination of the front and back biasing voltages was observed, and justified by the coupling effect of both Si/High-K dielectric and Si/SiO2 interface noise sources (channel/front oxide and channel/buried oxide), combined with the change of the Remote Coulomb scattering. From comparisons of the experimental and simulation results, it is shown that the main reason of this dependence is the distance of the charge distribution centroid from the interfaces, which is controlled by both front and back-gate bias voltages, and the way this distance affects the Remote Coulomb scattering coefficient a. A new LF noise model approach is proposed to include all these effects. This also allows us to assess the oxide trap density values for both interfaces.

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Dates et versions

hal-02001870 , version 1 (31-01-2019)

Identifiants

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Christoforos Theodorou, Eleftherios Ioannidis, Sebastien Haendler, Nicolas Planes, Franck Arnaud, et al.. Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC 2012 - 42nd European Solid State Device Research Conference, Sep 2012, Bordeaux, France. pp.334-337, ⟨10.1109/ESSDERC.2012.6343401⟩. ⟨hal-02001870⟩
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