Correlation of Optoelectronic and Transport Properties of GaN/AlN Nanowires with Polarity and Crystal Structure - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Correlation of Optoelectronic and Transport Properties of GaN/AlN Nanowires with Polarity and Crystal Structure

M. den Hertog
Fichier non déposé

Dates et versions

hal-02001729 , version 1 (31-01-2019)

Identifiants

  • HAL Id : hal-02001729 , version 1

Citer

M. den Hertog. Correlation of Optoelectronic and Transport Properties of GaN/AlN Nanowires with Polarity and Crystal Structure. International Microscopy Conference, Sep 2014, Prague, Czech Republic. ⟨hal-02001729⟩

Collections

UGA CNRS NEEL
9 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More