Impact of residual aluminum contamination on the determination of boron and phosphorus densities using Hall Effect in a Solar Grade Silicon ingot – a comparison to other characterization techniques. - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Impact of residual aluminum contamination on the determination of boron and phosphorus densities using Hall Effect in a Solar Grade Silicon ingot – a comparison to other characterization techniques.

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hal-02000987 , version 1 (31-01-2019)

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  • HAL Id : hal-02000987 , version 1

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Aurélie Fauveau, Benoit Martel, Jordi Veirman, Beatrice Drevet, Hélène H. Lignier, et al.. Impact of residual aluminum contamination on the determination of boron and phosphorus densities using Hall Effect in a Solar Grade Silicon ingot – a comparison to other characterization techniques.. European Photovoltaic Solar Energy Conference (Eu-PVSEC 2017), Sep 2017, Amsterdam, Netherlands. ⟨hal-02000987⟩
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