Plan View and Cross-Section View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2014

Plan View and Cross-Section View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties

Abstract

Application of low doped epitaxial layers and the increase of complexity of silicon photodiode design require the knowledge of the basic physical parameters such as minority carrier lifetime or diffusion length in order to improve the photodiode performance simulation. In this paper, EBIC technique is used to evaluate minority carrier lifetime and diffusion length on a silicon photodiode. Particular focus is to compare plan view and cross-section view testing geometry, and also to evaluate artefacts introduced by high injection conditions unavoidable in lifetime measurement.
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Dates and versions

hal-01996539 , version 1 (28-01-2019)

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Olivier Marcelot, Sergey Maximenko, Pierre Magnan. Plan View and Cross-Section View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties. IEEE Transactions on Electron Devices, 2014, 61 (7), pp.2437-2442. ⟨10.1109/TED.2014.2323997⟩. ⟨hal-01996539⟩
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