Stm Study Of The Nucleation And Annealing Of Ion-Bombardment Induced Defects On Cu(100) - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 1994

Stm Study Of The Nucleation And Annealing Of Ion-Bombardment Induced Defects On Cu(100)

Jc Girard
  • Fonction : Auteur
Y Samson
  • Fonction : Auteur
S Gauthier
  • Fonction : Auteur
S Rousset
J Klein
  • Fonction : Auteur

Résumé

The morphology of the (100) face of copper after sputtering with 600 eV Ar+ ions has been investigated by scanning tunneling microscopy (STM) as a function of ion beam flux and fluence. This process generates vacancy and adatom islands bounded by monatomic steps. These islands exhibit their equilibrium shape, which can be described as a square with rounded corners. At low flux, vacancy as well as adatom islands coexist and the removal mode is three-dimensional, whereas at high flux, adatom islands disappear and the removal mode becomes two-dimensional, that is layer-by-layer. Moreover, the observation of distinct vacancy or adatom islands depleted zones in the vicinity of pre-existing monatomic steps demonstrates that the kinetics of adsorption of vacancies or adatoms on a step depends on the side by which they reach the edge. The energy barriers which control these processes also affect the interlayer mass transport. These observations can be related in a consistent way if the height of these barriers is assumed to decrease for steps bounding small-sized islands.
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hal-01987626 , version 1 (21-01-2019)

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  • HAL Id : hal-01987626 , version 1

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Jc Girard, Y Samson, S Gauthier, S Rousset, J Klein. Stm Study Of The Nucleation And Annealing Of Ion-Bombardment Induced Defects On Cu(100). Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1994, 302 (1-2), pp.73-80. ⟨hal-01987626⟩
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