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Article Dans Une Revue Nanotechnology Année : 2012

ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications

Résumé

A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a-plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [$0\bar {2}1$] oriented ZnAl2O4 buffer layer was formed at the ZnO film and the a-plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectroscopy. A carrier density of ∼1017 cm−3 with an n-type conductivity of the ZnO nanowire array on a film sample is obtained by electrochemical impedance analysis. Finally, the ZnO nanowire array on a film sample is demonstrated to be an ideal template for a further synthesis of a single crystal quality ZnO–ZnGa2O4 core–shell nanowire array on a film structure. The fabricated ZnO–ZnGa2O4 sample revealed an enhanced anticorrosive ability and photoelectrochemical performance when used as a photoanode in a photoelectrochemical water splitting application.
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Dates et versions

hal-01986770 , version 1 (28-01-2022)

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Miao Zhong, Yukio Sato, Mario Kurniawan, Aleksandra Apostoluk, Bruno Masenelli, et al.. ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications. Nanotechnology, 2012, 23 (49), pp.495602. ⟨10.1088/0957-4484/23/49/495602⟩. ⟨hal-01986770⟩
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