Plasma Heavily Nitrogen-Doped Vertically Oriented Graphene Nanosheets (N-VOGNs) for High Volumetric Performance On-Chip Supercapacitors in Ionic Liquid - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Current Smart Materials Année : 2018

Plasma Heavily Nitrogen-Doped Vertically Oriented Graphene Nanosheets (N-VOGNs) for High Volumetric Performance On-Chip Supercapacitors in Ionic Liquid

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hal-01975226 , version 1 (09-01-2019)

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  • HAL Id : hal-01975226 , version 1

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David Aradilla, Marc Delaunay, Michael Buhagiar, Dmitry Aldakov, Jérôme Faure-Vincent, et al.. Plasma Heavily Nitrogen-Doped Vertically Oriented Graphene Nanosheets (N-VOGNs) for High Volumetric Performance On-Chip Supercapacitors in Ionic Liquid. Current Smart Materials, 2018, 3 (1), pp.32-39. ⟨hal-01975226⟩
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