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Communication Dans Un Congrès Année : 2015

Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals

Résumé

We present a self-consistent quantum simulation of an MoS2-WTe2 inter-layer Tunnel Field-Effect Transistor (TFET). Our calculations are based on the non-equilibrium Green's function (NEGF) formalism with electron-phonon scattering, and accurately account for the device electrostatics by a self-consistent coupling to the Poisson equation. Our results predict an extremely steep sub-threshold swing (SS<;30mV/dec), which is also robust against the channel-length scaling for a carefully designed structure.
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Dates et versions

hal-01966809 , version 1 (29-12-2018)

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Jiang Cao, Marco Pala, Alessandro Cresti, David Esseni. Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.245-248, ⟨10.1109/ULIS.2015.7063819⟩. ⟨hal-01966809⟩
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