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Article Dans Une Revue Solid-State Electronics Année : 2016

Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

Résumé

We simulate a band-to-band tunneling field-effect transistor based on a vertical heterojunction of single-layer MoS2 and WTe2, by exploiting the non-equilibrium Green’s function method and including electron–phonon scattering. For both in-plane and out-of-plane transport, we attempt to calibrate out models to the few available experimental results. We focus on the role of chemical doping and back-gate biasing, and investigate the off-state physics of this device by analyzing the influence of the top-gate geometrical alignment on the device performance. The device scalability as a function of gate length is also studied. Finally, we present two metrics for the switching delay and energy of the device. Our simulations indicate that vertical field-effect transistors based on transition metal dichalcogenides can provide very small values of sub-threshold swing when properly designed in terms of doping concentration and top-gate extension length.
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Dates et versions

hal-01964708 , version 1 (23-12-2018)

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Jiang Cao, Alessandro Cresti, David Esseni, Marco Pala. Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides. Solid-State Electronics, 2016, 116, pp.1-7. ⟨10.1016/j.sse.2015.11.003⟩. ⟨hal-01964708⟩
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