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Article Dans Une Revue Journal of Applied Physics Année : 2015

Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

Résumé

We present a full-quantum approach to investigate self-heating effects in nanoelectronic devices and exploit it to simulate rough nanowire field-effect transistors. Self-heating is found to significantly contribute (up to about 16%) to the degradation of the transistor performances, with an impact that is stronger for stronger roughness. The mechanism at the origin of the enhanced backscattering is the temperature increase due to the thermal conductivity reduction and the consequent increase of electron-phonon coupling.
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Dates et versions

hal-01964705 , version 1 (23-12-2018)

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M. Pala, Alessandro Cresti. Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study. Journal of Applied Physics, 2015, 117 (8), pp.084313. ⟨10.1063/1.4913511⟩. ⟨hal-01964705⟩
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