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Article Dans Une Revue Applied Physics Letters Année : 2018

Room temperature current modulation in large area electronic junctions of spin crossover thin films

Résumé

We report large-area (∼3 mm2), pinhole free crossbar junctions of thin films of the mol. complex [Fe(HB(tz)3)2] displaying spin transition around 336 K. The charge transport in the thinner junctions (10 and 30 nm) occurs by a tunneling mechanism, which is not affected substantially by the spin transition. The thicker junctions (100 and 200 nm) exhibit rectifying behavior and a reproducible drop of their elec. resistance by ca. 65-80% when switching the mols. from the high-spin to the low-spin state. This current modulation is ascribed to a bulk-limited charge transport mechanism via a thermally activated hopping process. The demonstrated possibility of resistance switching in ambient conditions provides appealing prospects for the implementation of mol. spin crossover materials in electronic and spintronic devices.

Dates et versions

hal-01961778 , version 1 (20-12-2018)

Identifiants

Citer

Victoria Shalabaeva, Karl Ridier, Sylvain Rat, Maria Dolores Manrique-Juarez, L. Salmon, et al.. Room temperature current modulation in large area electronic junctions of spin crossover thin films. Applied Physics Letters, 2018, 112 (1), pp.013301/1-013301/5. ⟨10.1063/1.5017458⟩. ⟨hal-01961778⟩
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