Since the experimental discovery of interface thermal resistance by Kapitza [1], many theoretical works have been performed to understand interfacial heat transport that is of great importance in nanostructures [2]. The mismatch models, the molecular Dynamics approach and the lattice dynamics are among the most popular approaches. In the acoustic mismatch model (AMM) [3] and diffuse mismatch model (DMM) [4] phonons are considered as plane waves experiencing specular or diffusive transmissions leading to simple semi -analytical models even when full-band dispersions are considered [5]. Several methods, more complex, have been used during the last decade, including molecular dynamics (MD) based on empirical potentials, Green function and lattice dynamics (LD) using inputs of ab-initio calculations [7]. This work presents a comparison of the thermal propertied of Si/Ge interface computed by using Full Band DMM and AMM presented in [6], the lattice dynamics approach of Ref [8] and MD. The goal of this paper is to discuss the consistency of the different results in terms of spectral and angular distribution.