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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2017

A New Method for Series Resistance Extraction of Nanometer MOSFETs

Résumé

This paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first- and second-order mobility degradation factors. To validate the proposed method, numerical simulations have been performed for devices of different characteristics. Besides, the method applicability has been demonstrated for experimental silicon nanowires and FinFETs. Apart from that, devices with different channel lengths can be used to estimate the mobility degradation factor influence.
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Dates et versions

hal-01948007 , version 1 (07-12-2018)

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Citer

Renan Trevisoli, Rodrigo Trevisoli Trevisoli, Michelly de Souza, Sylvain Barraud, Maud Vinet, et al.. A New Method for Series Resistance Extraction of Nanometer MOSFETs. IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2797-2803. ⟨10.1109/TED.2017.2704928⟩. ⟨hal-01948007⟩
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