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Article Dans Une Revue Solid-State Electronics Année : 2017

Leakage current conduction in metal gate junctionless nanowire transistors

Résumé

In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.
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Dates et versions

hal-01948000 , version 1 (07-12-2018)

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T.A. Oproglidis, T.A. Karatsori, S. Barraud, G. Ghibaudo, C.A. Dimitriadis. Leakage current conduction in metal gate junctionless nanowire transistors. Solid-State Electronics, 2017, 131, pp.20-23. ⟨10.1016/j.sse.2017.02.003⟩. ⟨hal-01948000⟩
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