Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices
Résumé
Sacrificial gate first process efficiency to further increase effective work function (WF$_{eff}$) towards P+ by metallic aluminum diffusion is demonstrated in this work by combining capacitance vs voltage (CV) measurements on beveled oxides with different spectroscopic techniques. Aluminum diffusion role on WF$_{eff}$ is evidenced and is found to be simultaneously dependent of as-deposited aluminum dose and annealing temperature.