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Article Dans Une Revue Microelectronic Engineering Année : 2015

Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices

Résumé

Sacrificial gate first process efficiency to further increase effective work function (WF$_{eff}$) towards P+ by metallic aluminum diffusion is demonstrated in this work by combining capacitance vs voltage (CV) measurements on beveled oxides with different spectroscopic techniques. Aluminum diffusion role on WF$_{eff}$ is evidenced and is found to be simultaneously dependent of as-deposited aluminum dose and annealing temperature.
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Dates et versions

hal-01947661 , version 1 (07-12-2018)

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Citer

C. Suarez-Segovia, C. Leroux, P. Caubet, F. Domengie, G. Reimbold, et al.. Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices. Microelectronic Engineering, 2015, 147, pp.113-116. ⟨10.1016/j.mee.2015.04.062⟩. ⟨hal-01947661⟩
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