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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2015

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Résumé

The feasibility of geometric magnetoresistance (MR) measurement from linear to saturation operation regime is demonstrated in ultrathin body and BOX fully depleted silicon-on-insulator devices from 14-nm technology node. Besides, we propose a new physical compact model for MOSFET drain current under high field transport, which reproduces experimental MR mobility from linear to saturation operation region and serves as the basis for a new extraction method of carrier saturation velocity. A benchmarking with state-of-the-art saturation velocity extraction methodologies is also conducted. Our saturation velocity results indicate that, for this technology, nonstationary transport prevails as manifested by an overshoot velocity behavior, still far from the ballistic limit.
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Dates et versions

hal-01947630 , version 1 (07-12-2018)

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Minju Shin, Ming Shi, Mireille Mouis, Antoine Cros, Emmanuel Josse, et al.. Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices. IEEE Transactions on Electron Devices, 2015, 62 (1), pp.3-8. ⟨10.1109/TED.2014.2366170⟩. ⟨hal-01947630⟩
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