Less mobility degradation induced by transverse electric-field in junctionless transistors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2014

Less mobility degradation induced by transverse electric-field in junctionless transistors

Résumé

The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.
Fichier non déposé

Dates et versions

hal-01947627 , version 1 (07-12-2018)

Identifiants

Citer

So Jeong Park, Dae-Young Jeon, Laurent Montes, Mireille Mouis, Sylvain Barraud, et al.. Less mobility degradation induced by transverse electric-field in junctionless transistors. Applied Physics Letters, 2014, 105 (21), pp.213504. ⟨10.1063/1.4902549⟩. ⟨hal-01947627⟩
28 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More