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Article Dans Une Revue Applied Physics Letters Année : 2014

Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Résumé

Inspired by the silicide technology in manufacturing silicon devices and the ongoing lack of knowledge on post-metallization annealing in realizing oxide devices, we investigated post-contact annealing for solution-processed InGaZnO transistors. Low-temperature annealing in air is found to significantly improve device uniformity, reproducibility, and subthreshold charge transport. However, this method is highly dependent on the employed contact metal. Detailed examination of devices using Al, Au, and Cu reveals that the physics of a metal/semiconductor interface is vital to its post-anneal response, which results in distinct device characteristics. Our results provide clues to better understand oxide transistors and to optimize their performance.

Dates et versions

hal-01947622 , version 1 (07-12-2018)

Identifiants

Citer

Yong Xu, Chuan Liu, Paul Seyram K. Amegadze, Won-Tae Park, Dang Xuan Xu, et al.. Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors. Applied Physics Letters, 2014, 105 (13), pp.133505. ⟨10.1063/1.4897003⟩. ⟨hal-01947622⟩
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