Separation of surface accumulation and bulk neutral channel in junctionless transistors
Résumé
The error rate of low-field mobility ($\mu_0$) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (N$_d$) for a typical value of the first order mobility attenuation factor $\theta_0$ ≈ 0.1 V$^{−1}$. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel ($\mu_0$_$_{acc}$) and the bulk neutral channel mobility ($\mu_{bulk}$) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between $\mu_0$_$_{acc}$ and $\mu_{bulk}$ is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform