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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2014

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory

Kan-Hao Xue
Yoshio Nishi
  • Fonction : Auteur

Résumé

Through ab initio calculations, we propose that the conductive filaments in Pt/HfO 2 /Pt resistive random access memories are due to HfO x suboxides, possibly tetragonal, where x ≤ 1.5. The electroforming process is initiated by a continuous supply of oxygen Frenkel defect pairs through an electrochemical process. The accumulation of oxygen vacancies leads to metallic suboxide phases, which remain conductive even as ultranarrow 1-nm 2 filaments embedded in an insulating HfO 2 matrix. Our experiments further show that the filaments remain as major leakage paths even in the OFF-state. Moreover, thermal heating may increase the OFF-state resistance, implying that there are oxygen interstitials left in the oxide layer, which may recombine with the oxygen vacancies in the filaments at high temperature.
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Dates et versions

hal-01947613 , version 1 (07-12-2018)

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Kan-Hao Xue, Boubacar Traoré, Philippe Blaise, Leonardo Fonseca, Elisa Vianello, et al.. A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory. IEEE Transactions on Electron Devices, 2014, 61 (5), pp.1394-1402. ⟨10.1109/TED.2014.2312943⟩. ⟨hal-01947613⟩
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