Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Semiconductor Science and Technology Année : 2014

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Résumé

This paper presents the low-temperature characteristics of flat-band (VFB) and low-field mobility in accumulation regime (µ0_acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C–V), dual gate coupling and low-temperature measurements were carried out to systematically investigate VFB. Additionally, the gate oxide capacitance per unit area Cox and the doping concentration ND were evaluated as well. Accounting for the position of VFB and the charge based analytical model of JLTs, bulk mobility (µB) and µ0_acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of µB and µ0_acc with gate length in planar and tri-gate nanowire JLTs.
Fichier non déposé

Dates et versions

hal-01947608 , version 1 (07-12-2018)

Identifiants

Citer

Min-Kyu Joo, Mireille Mouis, Dae-Young Jeon, Sylvain Barraud, So Jeong Jeon, et al.. Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature. Semiconductor Science and Technology, 2014, 29 (4), pp.045024. ⟨10.1088/0268-1242/29/4/045024⟩. ⟨hal-01947608⟩
30 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More