Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature
Résumé
This paper presents the low-temperature characteristics of flat-band (VFB) and low-field mobility in accumulation regime (µ0_acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C–V), dual gate coupling and low-temperature measurements were carried out to systematically investigate VFB. Additionally, the gate oxide capacitance per unit area Cox and the doping concentration ND were evaluated as well. Accounting for the position of VFB and the charge based analytical model of JLTs, bulk mobility (µB) and µ0_acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of µB and µ0_acc with gate length in planar and tri-gate nanowire JLTs.