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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2009

Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems

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hal-01939950 , version 1 (29-11-2018)

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  • HAL Id : hal-01939950 , version 1

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Guillaume Saint-Girons, J. Cheng, P. Regreny, L. Largeau, G. Patriarche, et al.. Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80 (15). ⟨hal-01939950⟩
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