Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Optical Materials Année : 2005

Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate

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hal-01939890 , version 1 (29-11-2018)

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  • HAL Id : hal-01939890 , version 1

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Y. Chriqui, Guillaume Saint-Girons, G. Isella, H. Von Kaenel, S. Bouchoule, et al.. Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate. Optical Materials, 2005, 27 (5), pp.846-850. ⟨hal-01939890⟩
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