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Conference Papers Year : 2016

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
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hal-01936580 , version 1 (27-11-2018)

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Sylvie Contreras, Leszek Konczewicz, Pawel Kwasnicki, Roxana Arvinte, Herve Peyre, et al.. Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩. ⟨hal-01936580⟩
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