Temperature Limits of Single and Composite Storage Layer with Different Thicknesses and Capping Materials for p-STT-MRAM Applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

Temperature Limits of Single and Composite Storage Layer with Different Thicknesses and Capping Materials for p-STT-MRAM Applications

Résumé

Perpendicular STT-MRAM temperature limits have been investigated in this paper by characterizing different simple and composite storage layer's thicknesses as well as different capping materials and annealing temperature conditions. Temperature measurements showed the importance of tuning precisely the thickness of the storage layer in order to choose between low consumption, high magnetic immunity, high working temperature, TMR and data retention in which the composite storage layer appeared to be the best compromise. The different thicknesses and stacks have then been compared to the main industrial applications to match thickness and performances.
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Dates et versions

hal-01934565 , version 1 (26-11-2018)

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Luc Tillie, Jyotirmoy Chatterjee, Ricardo Sousa, Stéphane Auffret, N. Lamard, et al.. Temperature Limits of Single and Composite Storage Layer with Different Thicknesses and Capping Materials for p-STT-MRAM Applications. 2018 IEEE International Memory Workshop (IMW), May 2018, Kyoto, France. ⟨10.1109/IMW.2018.8388854⟩. ⟨hal-01934565⟩
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