Article Dans Une Revue Ultramicroscopy Année : 2015

Quantitative investigation of SiGeC layers using atom probe tomography

Résumé

The quantification of carbon and germanium in a Si/SiGeC multilayer structure using atom probe tomography has been investigated as a function of analysis conditions. The best conditions for quantitative results are obtained using an intermediate electric field and laser power. Carbon evaporation shows strong spatial and temporal correlation. By using multi-ion event analysis, an evaporation mechanism is put forward to explain the modification of mass spectra as a function of electric field and laser power.

Dates et versions

hal-01928855 , version 1 (20-11-2018)

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Citer

Robert Estivill, Adeline Grenier, Sébastien Duguay, François Vurpillot, Tanguy Terlier, et al.. Quantitative investigation of SiGeC layers using atom probe tomography. Ultramicroscopy, 2015, 150, pp.23--29. ⟨10.1016/j.ultramic.2014.11.020⟩. ⟨hal-01928855⟩
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