Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions

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Electronique
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Dates et versions

hal-01927651 , version 1 (20-11-2018)

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P. Shiktorov, V. Gruzinskis, P. Starikov, C. Palermo, J. Torres, et al.. Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions. 22nd ICNF International Conference on Noise and Fluctuations, 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578932⟩. ⟨hal-01927651⟩
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