On the origins of transport inefficiencies in mesoscopic networks
Sébastien Toussaint
(1)
,
Frederico Martins
(1)
,
Sebastien Faniel
(1)
,
Marco Pala
(2)
,
L. Desplanque
(3, 4)
,
Xavier Wallart
(3, 4)
,
Hermann Sellier
(5)
,
Serge Huant
(6)
,
Vincent Bayot
(1)
,
Benoit Hackens
(1)
1
IMCN -
Institut de la matière condensée et des nanosciences / Institute of Condensed Matter and Nanosciences
2 C2N - Centre de Nanosciences et de Nanotechnologies
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 EPIPHY - IEMN - EPItaxie et PHYsique des hétérostructures - IEMN
5 NEEL - QuNES - Nano-Electronique Quantique et Spectroscopie
6 NEEL - NOF - Nano-Optique et Forces
2 C2N - Centre de Nanosciences et de Nanotechnologies
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 EPIPHY - IEMN - EPItaxie et PHYsique des hétérostructures - IEMN
5 NEEL - QuNES - Nano-Electronique Quantique et Spectroscopie
6 NEEL - NOF - Nano-Optique et Forces
Marco Pala
- Fonction : Auteur
- PersonId : 178951
- IdHAL : marco-pala
- ORCID : 0000-0001-5733-515X
- IdRef : 185867715
L. Desplanque
- Fonction : Auteur
- PersonId : 746179
- IdHAL : ludovicdesplanque
- ORCID : 0000-0002-2197-4408
- IdRef : 076098656
Xavier Wallart
- Fonction : Auteur
- PersonId : 741251
- IdHAL : xavier-wallart
- ORCID : 0000-0002-0915-0043
- IdRef : 03424879X
Hermann Sellier
- Fonction : Auteur
- PersonId : 2198
- IdHAL : hermann-sellier
- ORCID : 0000-0002-1439-1044
- IdRef : 071541675
Résumé
A counter-intuitive behavior analogous to the Braess paradox is encountered in a two-terminal mesoscopic network patterned in a two-dimensional electron system (2DES). Decreasing locally the electron density of one channel of the network paradoxically leads to an increased network electrical conductance. Our low temperature scanning gate microscopy experiments reveal different occurrences of such puzzling conductance variations, thanks to tip-induced localized modifications of electron flow throughout the network’s channels in the ballistic and coherent regime of transport. The robustness of the puzzling behavior is inspected by varying the global 2DES density, magnetic field and the tip-surface distance. Depending on the overall 2DES density, we show that either Coulomb Blockade resonances due to disorder-induced localized states or Fabry-Perot interferences tuned by the tip-induced electrostatic perturbation are at the origin of transport inefficiencies in the network, which are lifted when gradually closing one channel of the network with the tip.
Domaines
Physique [physics] Sciences de l'ingénieur [physics] Micro et nanotechnologies/MicroélectroniqueFormat du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
On the origins of transport inefficiencies in mesoscopic networks
|
Résumé |
en
A counter-intuitive behavior analogous to the Braess paradox is encountered in a two-terminal mesoscopic network patterned in a two-dimensional electron system (2DES). Decreasing locally the electron density of one channel of the network paradoxically leads to an increased network electrical conductance. Our low temperature scanning gate microscopy experiments reveal different occurrences of such puzzling conductance variations, thanks to tip-induced localized modifications of electron flow throughout the network’s channels in the ballistic and coherent regime of transport. The robustness of the puzzling behavior is inspected by varying the global 2DES density, magnetic field and the tip-surface distance. Depending on the overall 2DES density, we show that either Coulomb Blockade resonances due to disorder-induced localized states or Fabry-Perot interferences tuned by the tip-induced electrostatic perturbation are at the origin of transport inefficiencies in the network, which are lifted when gradually closing one channel of the network with the tip.
|
Auteur(s) |
Sébastien Toussaint
1
, Frederico Martins
1
, Sebastien Faniel
1
, Marco Pala
2
, L. Desplanque
3, 4
, Xavier Wallart
3, 4
, Hermann Sellier
5
, Serge Huant
6
, Vincent Bayot
1
, Benoit Hackens
1
1
IMCN -
Institut de la matière condensée et des nanosciences / Institute of Condensed Matter and Nanosciences
( 146171 )
- 1/6, Place L. Pasteur -1348 Louvain-la-Neuve
- Belgique
2
C2N -
Centre de Nanosciences et de Nanotechnologies
( 1041855 )
- 10 Boulevard Thomas Gobert, 91120, Palaiseau
- France
3
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
4
EPIPHY - IEMN -
EPItaxie et PHYsique des hétérostructures - IEMN
( 1067464 )
- Groupe EPIPHY (Epitaxy and physics of heterostructures) - IEMN LCI - Avenue Poincaré - CS 60069 -
59650 Villeneuve d'Ascq
- France
5
NEEL - QuNES -
Nano-Electronique Quantique et Spectroscopie
( 1042410 )
- Institut NEEL, 25 rue des Martyrs, BP 166,
38042 Grenoble cedex 9
- France
6
NEEL - NOF -
Nano-Optique et Forces
( 1042411 )
- Institut NEEL, 25 rue des Martyrs, BP 166,
38042 Grenoble cedex 9
- France
|
Langue du document |
Anglais
|
Nom de la revue |
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication |
2018-12
|
Volume |
8
|
Page/Identifiant |
3017
|
Domaine(s) |
|
Financement |
|
Mots-clés |
en
Electronic devices, Two-dimensional materials
|
DOI | 10.1038/s41598-018-21250-y |
PubMed Central | PMC5812991 |
Origine :
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