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Article Dans Une Revue Applied Physics Letters Année : 2016

High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%

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hal-01918137 , version 1 (09-11-2018)

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S. Fafard, F. Proulx, M. York, L. Richard, P. Provost, et al.. High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%. Applied Physics Letters, 2016, 109 (13), ⟨10.1063/1.4964120⟩. ⟨hal-01918137⟩
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