Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60% - Archive ouverte HAL
Article Dans Une Revue physica status solidi (RRL) - Rapid Research Letters Année : 2017

Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-01914427

Soumis le : mardi 6 novembre 2018-20:10:58

Dernière modification le : mardi 28 mai 2024-11:48:02

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hal-01914427 , version 1 (06-11-2018)

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F. Proulx, M. York, P. Provost, R. Arès, V. Aimez, et al.. Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%. physica status solidi (RRL) - Rapid Research Letters, 2017, 11 (2), ⟨10.1002/pssr.201600385⟩. ⟨hal-01914427⟩

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