Cu-SnAg Interconnects Evaluation for the Assembly at 10 mu m and 5 mu m Pitch - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

Cu-SnAg Interconnects Evaluation for the Assembly at 10 mu m and 5 mu m Pitch

Résumé

Several types of interconnects for the finer pitch assembly are currently being investigated across the globe. Here in this paper, a new type of interconnect Ni3Sn4 Interconnect is proposed and evaluated for assembly at 10 pitch and below. The proposed interconnect is compared to traditional solder interconnect. The comparison is done on the basis of shape of the joints in interconnects, the electric yield and mechanical properties. Later, Ni3Sn4 IMC interconnect is also compared to known Cu3Sn IMC Interconnect.

Domaines

Matériaux
Fichier non déposé

Dates et versions

hal-01914024 , version 1 (06-11-2018)

Identifiants

Citer

Divya Taneja, Marion Volpert, Gilles Lasfargues, Bertrand Chambion, Boris Bouillard, et al.. Cu-SnAg Interconnects Evaluation for the Assembly at 10 mu m and 5 mu m Pitch. 2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017), 2017, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. pp.376-383, ⟨10.1109/ECTC.2017.154⟩. ⟨hal-01914024⟩
54 Consultations
0 Téléchargements

Altmetric

Partager

More