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Article Dans Une Revue Journal of Applied Physics Année : 2010

Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001)

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hal-01892232 , version 1 (10-10-2018)

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J. Cheng, A. Chettaoui, J. Penuelas, B. Gobaut, P. Regreny, et al.. Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001). Journal of Applied Physics, 2010, 107 (9), ⟨10.1063/1.3407520⟩. ⟨hal-01892232⟩
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