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Communication Dans Un Congrès Année : 2018

Diamond Schottky barrier diodes for power electronics applications

Résumé

This paper presents the integration of diamondSchotkky barrier diodes (SBDs) for power electronics applicationsand the problematics linked to their implementation inpower converters. Various approches are considered for increasingthe current rating of the power device. In particular, theparallelization and the interleaving of pseudo-vertical diamondSBDs are investigated. This study allows to evidence interactionsbetween diodes from the same die which can result in unbalancedcurrent distribution between diodes with differences in electricalperformances. Modifications of the device structure are proposedin order to overcome this issue for improving the implementationof future diamond devices in power electronics applications.Index Terms—Schottky diodes, monocrystalline diamond, parallelization,monolithic integration
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Dates et versions

hal-01885530 , version 1 (02-10-2018)

Identifiants

  • HAL Id : hal-01885530 , version 1

Citer

Gaëtan Perez, Juliette Letellier, Aurélien Maréchal, David Eon, Gauthier Chicot, et al.. Diamond Schottky barrier diodes for power electronics applications. ECCE 2018, Sep 2018, Portland, United States. ⟨hal-01885530⟩
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