Nondestructive Room-Temperature Adsorption of 2, 4, 6-tri (2′-thienyl)−1, 3, 5-triazine on a Si-B Interface: High-Resolution STM Imaging and Molecular Modeling - Archive ouverte HAL
Article Dans Une Revue Physical Review Letters Année : 2008

Nondestructive Room-Temperature Adsorption of 2, 4, 6-tri (2′-thienyl)−1, 3, 5-triazine on a Si-B Interface: High-Resolution STM Imaging and Molecular Modeling

Résumé

Organic nanostructures on semiconductors are currently investigated but the surfaces are known to interact strongly with molecules. To reduce the molecule-surface interaction, we used the Si(111)-B √3×√3R30°. Deposition of isolated 2,4,6-tri(2′-thienyl)−1,3,5-triazine, was achieved at room temperature without modification of their π skeleton. This fascinating arrangement, observed by STM, has been validated by full density functional theory computations onto the entire system. The theoretical results give a clear explanation for the specific adsorption sites of molecules on the substrate.
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Dates et versions

hal-01872950 , version 1 (26-05-2021)

Identifiants

Citer

Y. Makoudi, F. Palmino, E. Duverger, Madjid Arab, F. Cherioux, et al.. Nondestructive Room-Temperature Adsorption of 2, 4, 6-tri (2′-thienyl)−1, 3, 5-triazine on a Si-B Interface: High-Resolution STM Imaging and Molecular Modeling. Physical Review Letters, 2008, 100 (7), pp.076405. ⟨10.1103/PhysRevLett.100.076405⟩. ⟨hal-01872950⟩
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