Excitons bounded around In-rich antiphase boundaries - Archive ouverte HAL
Poster Communications Year : 2018

Excitons bounded around In-rich antiphase boundaries

Abstract

With the combination of the mature silicon-microelectronic technology and the advantages of optical data processing, silicon photonics becomes more and more essential for future low-cost, high-speed technology[1]. The antiphase boundaries (APBs), which are believed to be detrimental defects for optical devices, have always been seen as one of the tough hurdles for the development of silicon photonics[2]. However, in this work we provided a new insight into the APBs which are involved in an efficient luminescence process. Temperature-and power-dependent photoluminescence (PL), X-ray diffraction (XRD) and energy-dispersive X-ray (EDX) elemental mapping techniques have been employed for a thorough analysis of APBs' contribution to optical and structural properties of an InGaP/SiGe/Si sample. The main PL peak is attributed to the recombination of excitons bounded around the neutralized In-rich APBs[3], which behave as vertical nanostructures. This scenario is in good correlation with previous theoretical works[4].
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Dates and versions

hal-01864401 , version 1 (29-08-2018)

Identifiers

  • HAL Id : hal-01864401 , version 1

Cite

Lipin Chen, Oliver Skibitzki, Yoan Léger, Christophe Levallois, Rozenn Piron, et al.. Excitons bounded around In-rich antiphase boundaries. 34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France. 2018. ⟨hal-01864401⟩
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