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Communication Dans Un Congrès Année : 2012

Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C

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Electronique
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hal-01862987 , version 1 (28-08-2018)

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  • HAL Id : hal-01862987 , version 1

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L. Cerutti, D. Sanchez, E. Tournié. Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C. 17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan. ⟨hal-01862987⟩
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