Growth strategies to control tapering in Ge nanowires - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue APL Materials Année : 2014

Growth strategies to control tapering in Ge nanowires

Résumé

We report the effect of PH3 on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400 degrees C in the presence of PH3, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH3/GeH4 ratio causes passivation at NW surface. At high PH3 concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH3 flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH3-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth

Dates et versions

hal-01848738 , version 1 (25-07-2018)

Identifiants

Citer

P. Periwal, T. Baron, P. Gentile, B. Salem, F. Bassani. Growth strategies to control tapering in Ge nanowires. APL Materials, 2014, 2 (4), pp.046105. ⟨10.1063/1.4870875⟩. ⟨hal-01848738⟩
56 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More