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Article Dans Une Revue ACS Nano Année : 2018

Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

Alain Marty
Gilles Renaud
Pierre Mallet
Toai Le Quang
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Yannick Dappe
Pascal Pochet
Matthieu Jamet

Résumé

Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe$_2$/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe$_2$ and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe$_2$ and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.
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Dates et versions

hal-01847258 , version 1 (23-07-2018)

Identifiants

Citer

Minh Tuan Dau, Maxime Gay, Daniela Di Felice, Céline Vergnaud, Alain Marty, et al.. Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene. ACS Nano, 2018, 12 (3), pp.2319 - 2331. ⟨10.1021/acsnano.7b07446⟩. ⟨hal-01847258⟩
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