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Communication Dans Un Congrès Année : 2008

Using temperature as observable of the frequency response of RF CMOS amplifiers

Résumé

The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.

Dates et versions

hal-01840908 , version 1 (16-07-2018)

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Citer

E. Aldrete-Vidrio, M. A. Salhi, J. Altet, Stéphane Grauby, D. Mateo, et al.. Using temperature as observable of the frequency response of RF CMOS amplifiers. 2008 13th European Test Symposium, May 2008, Verbania, Italy. pp.47-52, ⟨10.1109/ets.2008.15⟩. ⟨hal-01840908⟩

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