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Communication Dans Un Congrès Année : 2010

Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiode

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Electronique
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hal-01831030 , version 1 (05-07-2018)

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  • HAL Id : hal-01831030 , version 1

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L. Konczewicz, Sylvie Contreras, M. Baj, C. Cervera, J.-P. Perez, et al.. Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiode. Exmatec Conference, 2010, Darmstadt, Germany. ⟨hal-01831030⟩
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