Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structures - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2010

Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structures

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Electronique
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hal-01830997 , version 1 (05-07-2018)

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  • HAL Id : hal-01830997 , version 1

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S. Ben Rejeb, M. Debbichi, M. Saîd, A. Gassenq, E. Tournié, et al.. Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structures. International Conference on Nano-Materials and Renewable Energie, 2010, Safi, Morocco. ⟨hal-01830997⟩
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