Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Optical Materials Express Année : 2017

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

P. Bonanno
  • Fonction : Auteur
Xiaojian Li
  • Fonction : Auteur
R. Puybaret
  • Fonction : Auteur
G. Patriarche
C. Pradalier
A. Ougazzaden

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hal-01830918 , version 1 (05-07-2018)

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Y. El Gmili, P. Bonanno, S. Sundaram, Xiaojian Li, R. Puybaret, et al.. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates. Optical Materials Express, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩. ⟨hal-01830918⟩
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