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Communication Dans Un Congrès Année : 2010

GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature

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Electronique
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hal-01830913 , version 1 (05-07-2018)

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  • HAL Id : hal-01830913 , version 1

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L. Cerutti, J.-B. Rodriguez, E. Tournié. GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature. 22nd Int. Conf. on InP and Related Materials (IPRM 2010), 2010, Takamatsu, Japan. ⟨hal-01830913⟩
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