EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2008

EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties

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Electronique
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hal-01826457 , version 1 (29-06-2018)

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  • HAL Id : hal-01826457 , version 1

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A. N. Titkov, A. V. Ankudinov, M. S. Dunaevskii, K. S. Ladutenko, V. P. Evtikvhiev, et al.. EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties. XII International Symposium on Nanophysics and Nanoelectronics, 2008, Nizhny Novgorod, Russia. ⟨hal-01826457⟩
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