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Article Dans Une Revue IEEE Electron Device Letters Année : 2017

Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO 2 Thin Films for MIM Capacitors

Résumé

In this letter, the dielectric properties of rutile TiO2 thin films are studied for metal-insulator-metal capacitor applications. The dielectric constant, the ac conductivity, and the loss tangent are measured in a wide band frequency range, from 1 Hz to 2 GHz. The effect of aluminum doping, as well as the influence of film thickness, on the dielectric properties is presented.
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hal-01825050 , version 1 (28-06-2018)

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Ahmad Chaker, Cédric Bermond, Philippe Artillan, Patrice Gonon, Christophe Vallée, et al.. Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO 2 Thin Films for MIM Capacitors. IEEE Electron Device Letters, 2017, 38 (3), pp.375 - 378. ⟨10.1109/LED.2017.2654513⟩. ⟨hal-01825050⟩
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