Velocity effect on heavy ion-induced gate oxide latent defects - Archive ouverte HAL
Communication Dans Un Congrès Année : 2010

Velocity effect on heavy ion-induced gate oxide latent defects

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Electronique
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Dates et versions

hal-01823532 , version 1 (26-06-2018)

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  • HAL Id : hal-01823532 , version 1

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Antoine Touboul, M. Portier, R. Arinero, G. Chaumont, Frédéric Saigné, et al.. Velocity effect on heavy ion-induced gate oxide latent defects. 47th IEEE Nuclear Space and Radiation Effects Conference, 2010, Denver, United States. ⟨hal-01823532⟩
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