Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Express Year : 2012

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

Abstract

We report on silicon n-type delta (δ)-doping of gallium nitride (GaN) epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon (111) substrates. In a series of group III–nitride epitaxial structures a ∼1-µm-thick Si bulk-doped GaN layer is replaced by 100, 50, 10, 5, or 1 Si δ-doped planes. While Si bulk-doping of GaN aggrandizes the in-plane tensile stress and the wafer bow with respect to undoped structures, δ-doping is found to reduce both stress and wafer bow. Two-dimensional carrier sheet densities between 10 12 and 10 13 cm -2 per δ-doped plane and electron mobilities of 1429 cm 2 V -1 s -1 are achieved.
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Dates and versions

hal-01810916 , version 1 (08-06-2018)

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David Schenk, Alexis Bavard, Eric Frayssinet, Xi Song, Frédéric Cayrel, et al.. Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates. Applied Physics Express, 2012, 5 (2), pp.025504. ⟨10.1143/APEX.5.025504⟩. ⟨hal-01810916⟩
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