Experimental Observation and Analytical Model of the Stress Gradient Inversion in 3C-SiC Layers on Silicon - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2012

Experimental Observation and Analytical Model of the Stress Gradient Inversion in 3C-SiC Layers on Silicon

Abstract

A detailed study of the static bending of micro-cantilevers has been performed for structures created from thin 3C-SiC films grown on (100) and (111) oriented silicon substrates. The biaxial stress distribution in the direction of the film normal has been evaluated based on analysis of the deformation profiles of clamped-free 3C-SiC beams of various thicknesses. Surprisingly, the obtained results clearly indicate that for as-grown samples of both studied orientations, the absolute value of the intrinsic stress increases from the interface to the surface of the film. We propose a simple analytical model of a relaxation process that explains in a quantitative way this unexpected phenomenon of stress gradient inversion.
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Dates and versions

hal-01810913 , version 1 (08-06-2018)

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M. Zielinski, Jean-François Michaud, Sai Jiao, Thierry Chassagne, Anne-Elisabeth Bazin, et al.. Experimental Observation and Analytical Model of the Stress Gradient Inversion in 3C-SiC Layers on Silicon. Journal of Applied Physics, 2012, 111 (5), pp.053507. ⟨10.1063/1.3687370⟩. ⟨hal-01810913⟩
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