Strained silicon photonics for Pockels effect based modulation - Archive ouverte HAL Access content directly
Conference Papers Year : 2017

Strained silicon photonics for Pockels effect based modulation

Abstract

We present on experimental results of straininduced Pockels effect in silicon based on Mach-Zehnder interferometer modulators. We theoretically studied both Pockels effect and carrier parasitic effect in silicon under an electric field. We demonstrated high speed Pockels-based optical modulation up to 25 GHz.
Fichier principal
Vignette du fichier
GFP2017 Paper.pdf (354.42 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-01803049 , version 1 (02-03-2021)

Identifiers

Cite

Mathias Berciano, Pedro Damas, Guillaume Marcaud, Xavier Le Roux, Paul Crozat, et al.. Strained silicon photonics for Pockels effect based modulation. 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Aug 2017, Berlin, Germany. ⟨10.1109/GROUP4.2017.8082194⟩. ⟨hal-01803049⟩
48 View
77 Download

Altmetric

Share

Gmail Facebook X LinkedIn More