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Communication Dans Un Congrès Année : 2006

Plasma Immersion Ion Implantation applied to P plus N junction solar cells

Résumé

Plasma immersion ion implantation is an alternative doping technique for the formation of Ultra Shallow Junctions in semiconductor. In this study, we present the PIE technology developed by the company Ion Beam Services and called PULSION (R). We explain the advantages of PHI for the conception of thin emitter solar cells and the use of N type silicon in the fabrication of photodiode. Electrical characterisations of solar cells prepared by immersion of silicon wafer in BF3 plasma are presented, showing a satisfying photovoltaic behaviour and more specially an increase of internal quantum efficiency in the short wavelength range, due to the thickness of the emitter.
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Dates et versions

hal-01802919 , version 1 (29-05-2018)

Identifiants

  • HAL Id : hal-01802919 , version 1

Citer

Vanessa Vervisch, Damien Barakel, F. Torregrosa, L. Ottaviani, M. Pasquinelli. Plasma Immersion Ion Implantation applied to P plus N junction solar cells. ION IMPLANTATION TECHNOLOGY, 2006, Unknown, Unknown Region. pp.253+. ⟨hal-01802919⟩
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